From state of the art Bosch Process to high temperature Cl etch, the PNF has the capability to etch all common compound semiconductors and metals. MEMS processes can also utilize our HF and XeF2 etchers for release processes.
- IoN Wave 10 Plasma Asher
The IoN Wave 10 Plasma Asher is a mid-size wafer batch plasma microwave asher used for the removal of photoresists from etched wafers, wafer descum, and wafer cleaning prior to wet etching, among other applications. It is capable of high photoresist ashing rates with minimal exposure to electro static discharge (ESD).
- Memsstar Orbis Alpha Oxide Etch System
The Memsstar Orbis Alpha Oxide Etch System is a small footprint, self-contained oxide etch system which utilizes hydrogen fluoride etchants along with memsstar’s unique patented high volume production process to enable researchers to develop production-capable processes for the next generation of MEMS devices.
- Plasma-Therm ICP Chlorine Etch
The Plasma-Therm ICP (Inductively Coupled Plasma) Chlorine Etch is an etching system which uses chlorine based chemistries to etch metal films and compound semiconductors. Chlorine plasma etching differs from Fluoride etching (see Plasma-Therm ICP Fluoride Etch) in respect of the chemistries, Chlorine and Fluoride based, used in each.
- Plasma-Therm ICP Fluoride Etch
The Plasma-Therm ICP (Inductively Coulped Plasma) Fluoride Etch is an etching system which uses fluoride solutions to etch metal films and compound semiconductors. Fluoride plasma etching differs from Chlorine etching (see Plasma-Therm ICP Chlorine Etch) in respect of the chemistries, Chlorine and Fluoride based, used in each.
- Plasma-Therm Versaline Deep Si RIE
The Plasma-Therm Versaline DSE (Deep Silicon Etcher) is a deep silicon etcher Plasma RIE that runs the Bosch Si process. It is primarily used for deep etching of MEMS structures in silicon. The Bosch process is used for the creation of deep, almost vertical, high aspect ratio structures and is an alternative to cryogenic chuck adapted ICP RIE systems and allows for deeper SI etches and a higher aspect ratio relative to these systems.
- YES CV200 RFS Plasma Strip / Descum System
The YES CV200 RFS Plasma Strip / Descum System is used for the removal of thick layers of photoresist or polymide in short production times; accomodating the strict requirements of contemporary front-end semiconductor processing equipment. The YES CV200 RFS operates in two main modes, a powerful plasma stripping mode removes tough and / or thick resists while a gentler descum mode can be used to deal with the cleaning of inorganic substrates.
- YES G1000 Plasma Cleaning System
The YES G1000 Plasma Cleaning System is a plasma cleaning system used for the cleaning and low temperature descum of substrates, as well the surface modification and gentle cleaning of inorganic substrates. The use of plasma at a low generation frequency (40 kHz) in substrate cleaning allows for flexibility around cleaning processes, including, for example, the cleaning of electronically sensitive devices. The YES G1000 generates plasma between an active and grounded electrode plate, free electrons, created in the plasma field, are drawn down by the grounded plate allowing only active ions to pass through to clean components; the result is uniform and consistent processing which, as highlighted previously, leaves the electronic properties of cleaned components unchanged.