Ultratech/Cambridge Savannah ALD System is equipped with high-speed pneumatic pulse valves to enable thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.
Process Modes:
- Continuous Mode™ for high speed operation
- Exposure Mode™ deposition for ultra-high aspect ratio structures (> 1:2000)
Capable of handling gas, liquid, or solid precursors
Equipped with heated precursors lines
Wafers to 8” (200 mm) diameter x 0.25” (6.4 mm) deep
Flow-optimized ALD chamber for thermal or plasma deposition
Substrate temperatures to 350 °C
Dual Zone Reactor Heaters: Differential wall and substrate heating
Venting time: <1 minute (mass flow controller regulated venting to prevent turbulence when using small sample pieces)
Gas flow during operation: 20 SCCM
Many common precursors already available in pre-packs from Strem Chemicals and Sigma-Aldrich
Film Uniformity: <1 %
Thin film deposition
Process Manager
+1 (773) 834-4978
Reserve this tool with the Online Tool Manager.
Tier 0
