The Ultratech Fiji G2 plasma system is a modular high-vacuum ALD (Atomic Layer Deposition) system that accommodates a wide range of deposition modes while using a flexible system architecture that permits multiple configurations of precursors and plasma gases. The result is a plasma ALD system that reproduces the thermal and plasma enhanced ALD films of the literature as well as providing experimental flexibility for future ALD innovations.
Substrates up to 200 mm
Wafers to 8”
Flow-optimized ALD chamber for thermal or plasma deposition
Substrate temperatures to 350 °C
Uniform coverage for plasma deposited films (on aspect ratios of 20:1)
Process Modes: Thermal Continuous Mode for high speed depositions, Thermal Expo Mode with stop valve operation for ultra-high aspect ratio structures (> 450:1), and Plasma Mode for difficult nitrides and metals
All system parameters can be controlled in recipe (e.g. substrate and precursor temperatures, gas mass flows, pulse times, etc.
High conformity coatings
Near monolayer growth conditions
Deposits with high uniformity and conformity on a nanometer scale Deposition uniformity of Al2O3 is 1.5%
High quality films for heterostructures, nanotubes, and organic semiconductors
Used in LED and III - V devices
MEMS
Optoelectronics
Renewable energy technology
Tier 0
