Full Process List

AZ 1518 Photoresist

The AZ 1518 Photoresist is a Photoresist of elevated film thickness used for improved stability resist masks in wet etching processes.

AZ 300T Stripper

AZ 300T is a high performance photoresist stripper containing alkaline additive that leaves substrate surfaces clean of organic contaminants. 

AZ 400K Developer

The AZ 400K Developer is a potassium based buffered developer. It is an odorless, aqueous, inorganic, alkaline solution designed to achieve high contrast and wall profile with photoresists at high coating thicknesses, especially AZ 4500 and P 4000 series photoresists. It has excellent batch-to-batch consistency. 

AZ 5214 IR Photoresist

The AZ 5214E Image Reversal Photoresist is a special photoresist intended for lift-off-techniques which call for a negative wall profile, although the AZ 5214E is a positive resist it can be used effectively in IR creating a negative pattern of a mask. 

AZ 726 MIF Developer

The AZ 726 MIF Developer is a metal ion free developer with a small amount of added wetting agent to provide fast and uniform puddle build up. It consists of an aqueous solution of 2.38% tetramethyl-ammonium-hydroxide. 

AZ EBR Edge Bead Remover

AZ EBR Edge Bead Remover is a high purity solvent designed for photoresist edge bead removal, coating cup rinse and wafer backside rinse. 

AZ MiR 703 Positive Photoresist

The AZ MiR 703 Positive Photoresist is a medium resolution i-line sensitive Photoresist optimized for line and contact hole pattern layers. 

AZ nLOF 2020 Photoresist

The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. The nLOF 2020 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers. 

AZ nLOF 2070 Photoresist

The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. The nLOF 2070 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers.

AZ P4110 Photoresist

The AZ P4110 Photoresist is a photoresist with improved adhesion to most common substrates and is used in wet etching and plating processes. It has a low photo active compound concentration which allows for the application of thick resist films. 

AZ P4330 Photoresist

The AZ P4330 Photoresist is a photoresist with improved adhesion to most common substrates and is used in wet etching and plating processes. It has a low photo active compound concentration which allows for the application of thick resist films.

AZ P4620 Photoresist

The AZ P4620 Photoresist is a photoresist with improved adhesion to most common substrates and is used in wet etching and plating processes. It has a low photo active compound concentration which allows for the application of thick resist films.

NANO 495 PMMA

PMMA (Polymethyl methacrylate) is a positive resist used for direct electron beam writing and as a polymeric coating for wafers. 495 indicates that the PMMA is of molecular weight 495K.