Lithography
State-of-the-art equipment for processes involving photolithography (to 500nm), electron beam lithography (to 8nm), and direct-write lithography (to 1um). Resist thickness from 20nm to 100um support processes from superconducting to microfluidics.
-
I-Line Stepper
-
Contact Aligner
-
Electron Beam Pattern Generator
-
UV Flood Exposure System
-
Dual Wavelength Direct Write System (375 nm, 405 nm)
- AZ 400K Developer
The AZ 400K Developer is a potassium based buffered developer. It is an odorless, aqueous, inorganic, alkaline solution designed to achieve high contrast and wall profile with photoresists at high coating thicknesses, especially AZ 4500 and P 4000 series photoresists. It has excellent batch-to-batch consistency.
- AZ 726 MIF Developer
The AZ 726 MIF Developer is a metal ion free developer with a small amount of added wetting agent to provide fast and uniform puddle build up. It consists of an aqueous solution of 2.38% tetramethyl-ammonium-hydroxide.
- AZ nLOF 2020 Photoresist
The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. The nLOF 2020 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers.
- AZ nLOF 2070 Photoresist
The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. The nLOF 2070 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers.
- NANO 495 PMMA
PMMA (Polymethyl methacrylate) is a positive resist used for direct electron beam writing and as a polymeric coating for wafers. 495 indicates that the PMMA is of molecular weight 495K.