Lithography

State-of-the-art equipment for processes involving photolithography (to 500nm), electron beam lithography (to 8nm), and direct write lithography (to 1um). Resist thickness from 20nm to 100um support processes from superconducting to microfluidics.

AZ 400K Developer

The AZ 400K Developer is a potassium based buffered developer. It is an odorless, aqueous, inorganic, alkaline solution designed to achieve high contrast and wall profile with photoresists at high coating thicknesses, especially AZ 4500 and P 4000 series photoresists. It has excellent batch-to-batch consistency. 

AZ 726 MIF Developer

The AZ 726 MIF Developer is a metal ion free developer with a small amount of added wetting agent to provide fast and uniform puddle build up. It consists of an aqueous solution of 2.38% tetramethyl-ammonium-hydroxide. 

AZ nLOF 2020 Photoresist

The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. The nLOF 2020 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers. 

AZ nLOF 2070 Photoresist

The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. The nLOF 2070 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers.

NANO 495 PMMA

PMMA (Polymethyl methacrylate) is a positive resist used for direct electron beam writing and as a polymeric coating for wafers. 495 indicates that the PMMA is of molecular weight 495K.