Lithography

State-of-the-art equipment for processes involving photolithography (to 500nm), electron beam lithography (to 8nm), and direct-write lithography (to 1um). Resist thickness from 20nm to 100um support processes from superconducting to microfluidics.

AZ 400K Developer

The AZ 400K Developer is a potassium based buffered developer. It is an odorless, aqueous, inorganic, alkaline solution designed to achieve high contrast and wall profile with photoresists at high coating thicknesses, especially AZ 4500 and P 4000 series photoresists. It has excellent batch-to-batch consistency. 

AZ 726 MIF Developer

The AZ 726 MIF Developer is a metal ion free developer with a small amount of added wetting agent to provide fast and uniform puddle build up. It consists of an aqueous solution of 2.38% tetramethyl-ammonium-hydroxide. 

AZ nLOF 2020 Photoresist

The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. The nLOF 2020 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers. 

AZ nLOF 2070 Photoresist

The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. The nLOF 2070 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers.

NANO 495 PMMA

PMMA (Polymethyl methacrylate) is a positive resist used for direct electron beam writing and as a polymeric coating for wafers. 495 indicates that the PMMA is of molecular weight 495K.